FQB22P10 100V22A P沟道 功率MOS管 TO263 FAIRCHILD
来源:深圳市轩嘉盛电子有限公司 | 发布时间:2018-2-7 | 浏览次数:
FQB22P10 100V22A P沟道 功率MOS管 TO263 FAIRCHILD
FQB22P10型号 | FQB22P10品牌 | FQB22P10封装 | FQB22P10备注 |
FQB22P10 | FAIRCHILD仙童 | TO263 | 原装正品 |
BC847BS NXP/恩智浦 SOT-363 PDF资料 NPN通用双晶体管
FQB22P10的特征:
•-22A,-100V,RDS(on)=0.125Ω@ VGS = -10 V
-22A, -100V, RDS (on) = 0.125Ω @ VGS = -10V
•低门限电荷(典型值40 nC)
Low threshold charge (40 nC typical)
•低Crs(典型值160 pF)
Low Crs (160 pF typical)
•快速切换
Fast switching
•100%雪崩测试
100% avalanche test
•改进的dv / dt能力
Improved dv / dt capability
•最高结温为175°C
The maximum junction temperature is 175 ° C
FQB22P10的绝对最大额定值:
FQB22P10的描述:
这些P沟道增强型功率场效应晶体管采用
These P-channel enhancement mode power field effect transistors are used
飞兆半导体专有的平面条形DMOS技术生产
Fairchild's proprietary planar strip DMOS technology production
这种先进的技术专门用于降低通态电阻
This advanced technology is designed to reduce the on-state resistance
提供卓越的开关性能,并在雪崩和换向模式下承受高能脉冲
Offers excellent switching performance and withstands high-energy pulses in avalanche and commutation modes
这些器件非常适合低电压应用,如音频放大器
These devices are ideal for low voltage applications such as audio amplifiers
高效开关DC / DC转换器和直流电机控制
High efficiency switching DC / DC converter and DC motor control
FDD3670 | FDD3672 | FDS3580 | FDD8796 | FDD5680 |
FDS5351 | FDS4953 | FDS4953A | FDS3672 | FDD5612 |
FDD5614 | FDS6576 | FDS6572A | FDS6575 | FDS6574A |
FDD6670A | FDS8333C | FDS6682 | FDS6680A | FDS4935A |
FDS8876 | FDS8878 | FDS8870 | FDS8874 | FDS6975 |
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